ts1 3 007b high voltage npn transistor 1 / 5 version: a07 to - 220 product summary bv ceo 400v bv cbo 700v i c 8a v ce(sat) 3v @ i c / i b = 8a / 2a features high voltage high speed switching structure silicon triple diffused type npn silicon transistor ordering information part no. package packing ts13007bcz c0 to - 220 50pcs / tube block diagram absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit collector - base voltage v cbo 700v v collector - emitter voltage v ceo 400v v emitt er - base voltage v ebo 9 v dc 8 collector current pulse i c 16 a dc 4 base current pulse i b 8 a total power dissipation @ t c =25 c p tot 80 w operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c note: single pulse. p w = 300us, duty 2% pin definition : 1. base 2. collector 3. emitter
ts1 3 007b high voltage npn transistor 2 / 5 version: a07 electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static collector - base voltage i c = 1ma, i b = 0 bv cbo 700 -- -- v collector - emitter breakdown voltage i c = 10ma, i e = 0 bv ceo 400 -- -- v emit ter - base breakdown voltage i e = 1ma, i c = 0 bv ebo 9 -- -- v collector cutoff current v ce = 400v, i b = 0 i ceo -- -- 1 ma collector cutoff current v cb = 700v, i e = 0 i cbo -- -- 1 ma emitter cutoff current v eb = 9 v, i c = 0 i ebo -- -- 1 m a collector - emitter satur ation voltage i c =2 a , i b =0.4 a i c = 5a , i b = 1a i c = 8a , i b = 2a v ce(sat)1 v ce(sat)2 v ce(sat) 3 -- -- -- -- -- -- 1 1. 5 3 v base - emitter saturation voltage i c =2 a , i b =0.4 a i c =5 a , i b = 1a v b e(sat)1 v b e(sat)2 -- -- -- -- 1.2 1.6 v dc current gain v ce = 5v, i c = 2 a v ce = 5v, i c = 5 a h fe 20 5 -- -- 40 30 dynamic frequency v ce = 10v, i c = 0. 5 a f t 4 -- -- mhz output capacitance v cb = 10v, f =0.1mhz cob -- 180 -- pf resistive load switching time (ratings) delay time t d -- 0.06 0.1 us rise time t r 0.45 1 us storage time t stg -- 2.8 3 us fall time v cc = 125v, i c =5 a, i b1 = i b2 = 1a, t p =25us duty cyc l e 1% t f -- 0.3 0. 7 us note: pulse test: pulse width ? 300us, duty cycle ? 2%
ts1 3 007b high voltage npn transistor 3 / 5 version: a07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) figu re 1. static characteri sti c s figure 2. dc current gain figure 3. v ce(sat ) v.s. v be(sat figure 4. power derating
ts1 3 007b high voltage npn transistor 4 / 5 version: a07 to - 220 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to - 220 dimension millimeters in ches dim min max min max a 10.000 10.500 0.394 0.413 b 3.740 3.910 0.147 0.154 c 2.440 2.940 0.096 0.116 d - 6.350 - 0.250 e 0.381 1.106 0.015 0.040 f 2.345 2.715 0.092 0.058 g 4.690 5.430 0.092 0.107 h 12.700 14.732 0.500 0.581 j 14.224 16.510 0.56 0 0.650 k 3.556 4.826 0.140 0.190 l 0.508 1.397 0.020 0.055 m 27.700 29.620 1.060 1.230 n 2.032 2.921 0.080 0.115 o 0.255 0.610 0.010 0.024 p 5.842 6.858 0.230 0.270
ts1 3 007b high voltage npn transistor 5 / 5 version: a07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liabil ity for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and cond itions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantabilit y, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such appli cations do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
|
